gmf05mc document number 85855 rev. 1.1, 02-mar-05 vishay semiconductors www.vishay.com 1 18538-4 vy - v = vishay y = year, is variable for digit from 0 to 9 (e.g. 4 = 2004, 5 = 2005) cw = calendar week, is variable for number from 01 to 52 gm3 = code for gmf05mc cw vy gm3 1 1 2 3 6 5 4 low capacitance esd protection diode array features ? transient protection for data lines as per iec 61000 - 4 - 2 (esd) 15 kv (air), 8 kv (contact), iec 61000 - 4 - 5 (lightning) 7 a (tp = 8/20 s) small package for use in portable electronics bidirectional protection of 4 i/o lines unidirectional protection of 5 i/o lines low leakage current ideal for cellular handsets, cordless phones, note- books, handhelds and digital cameras mechanical data case: sot-363 plastic case molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: approx. 6.0 mg parts table absolute maximum ratings ratings at 25 c, ambient tem perature unless otherwise specified thermal characteristics ratings at 25 c, ambient tem perature unless otherwise specified part ordering code marking remarks gmf05mc GMF05MC-GS08 gm3 tape and reel parameter test condition symbol value unit peak pulse power 8/20 s waveform p ppm 100 w peak pulse current 8/20 s waveform i pp 7a parameter test condition symbol value unit operating temperature t j - 55 to + 125 c storage temperature t stg - 55 to + 150 c e3
www.vishay.com 2 document number 85855 rev. 1.1, 02-mar-05 vishay gmf05mc vishay semiconductors electrical characteristics ratings at 25 c, ambient temper ature unless otherwise specified typical characteristics (tamb = 25 c unless other wise specified) parameter test condition symbol min typ. max unit reverse stand-off voltage v rwm 5v reverse breakdown voltage i t = 1 ma v br 6v reverse leakage current v rwm = 5 v i r 0.2 a clamping voltage i pp = 1 a, 8/20 s waveform v c 9v i pp = 7 a, 8/20 s waveform v c 12 v peak forward voltage i f = 1 a, 8/20 s waveform v f 1.5 v junction capacitance between i/ o pins and gnd v r = 0 v, f = 1 mhz c j 75 pf figure 1. pulse derating curve figure 2. pulse waveform 0 25 50 75 100 075 25 50 100 125 150 175 peak pulse power (p pp ) or current (i pp ) derating in percentage, % t a - ambient temperature ( c) 18687 i ppm -pe a k pulse current, % i rsm pulse width (td) is defined a s the point where the pe a k current dec a ys to 50 % of i ppm t - time ( s) t d = i pp 2 0 8 0 90 6 0 70 40 50 20 10 30 100 110 15 20 52530 10 0 1 8688 g a g aaaaag 0.01 0.1 1 10 100 0.1 1 10 100 1000 1 8668 ppm p-pe a k pulse power ( kw ) t d - pulse dur a tion ( a) 0 10 20 30 40 50 6 0 70 8 0 90 100 012345 6 1 866 9 v r - reverse volt ag e(v) c - diode c a p a cit a nce(pf) d f=1mhz
vishay gmf05mc document number 85855 rev. 1.1, 02-mar-05 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) figure 5. typical reverse voltage vs. reverse current 0 1 2 3 4 5 6 7 0.01 0.1 1 10 100 1000 v - reverse volt ag e(v) i r - reverse current ( a) 1 86 70 r figure 6.typicalclampingvoltagevs.peakpulsecurrent 0 2 4 6 8 10 12 14 012345 6 7 8 910 1 86 71 i pp -pe a k pulse curren t(a) v - typic a lcl a mpin g volt ag e(v) c 1.60 (0.063) 1.30 (0.052) ref. 0.65 (0.026) ref. 0.35 (0.014) 0.90 (0.035) 14280 0.80 (0.031) 1.00 (0.039) 10 0.10 (0.004) 0.10 (0.004) 0.25 (0.010) 1.80 (0.071) 2.20 (0.087) 2.00 (0.079) 2.20 (0.087) 1.15 (0.045) 1.35 (0.053) 0.20 (0.009) 0.30 (0.012) 0.65 (0.026) 1.3 (0.052) i s o m e t h o d e mountin g pad layout
www.vishay.com 4 document number 85855 rev. 1.1, 02-mar-05 vishay gmf05mc vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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